Si3N4 Microstructure

alpha/beta phase surrogate

Si3N4 visible area 42.16% alpha/beta ratio inside Si3N4 α 63.8% / β 36.2%

Visible area controls

alpha area on image 26.89% beta area on image 15.27%

alpha grain 142 nm beta grain 520 nm

Seed Contrast

3D sectioning and etching slice 0 · etch 18 nm

Slice index 0

Slice spacing 80 nm Polish thickness 70 nm

Etch depth 18 nm Etch strength 0.38

Defocus blur 0.00

SEM texture noise 0.22

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